absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz,gate open 400 v i t(av) average on-state current half sine wave : t c =77 c 2.0 a i t(rms) r.m.s on-state current 180 conduction angle 4 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 20 a i 2 t i 2 t for fusing t = 8.3ms 1.65 a 2 s p gm forward peak gate power dissipation t c = 77 c, pulse width ? 1.0 k 0.5 w p g(av) forward average gate power dissipation t c =77c,pulse width ? 1.0 k 0.1 w i fgm forward peak gate current t c =77 c, pulse width ? 1.0 k 0.2 a v rgm reverse peak gate voltage t c = 77 c, pulse width ? 1.0 k 5.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 125 c D2P4M april, 2005. rev.0 features repetitive peak off-state voltage : 400v r.m.s on-state current ( i t(rms) = 2.0 a ) on-state voltage (2.2v(max) @ i tm = 4a) pb - free packages are available general description sensitive-gate triggering thyristor is suitable for the application where requiring low gate tr iggerring current system used for electric blanket ,ele ctronic jar ,temperature con- trol,lighting control such as a entertainment display. automatic ignition system , battery charger . 1/5 sensitive gate silicon controlled - rectifiers 2. anode 3.gate 1.cathode symbol ? ? ? ? i t(rms) = 2.0 a i tsm = 4 a bv drm = 400v copyright @ d&i semiconductor co., ltd., all rights reserved. 1 2 3 to-126
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v ak = v drm t c = 25 c t c = 125 c 10 200 u v tm peak on-state voltage (1) i tm = 4 a tp = 380 k 2.2 v i gt gate trigger current (2) v ak = 6 v(dc), r l =10 ? t c = 25 c 200 u v gt gate trigger voltage (2) v d =6 v(dc), r l =10 ? t c = 25 c 1.5 v v gd non-trigger gate voltage (1) v ak = 12 v, r l =100 ? t c = 125 c 0.2 v dv/dt critical rate of rise off-state voltage linear slope up to v d = v drm 67% r gk = 1 kohm t j = 125 c 10 v/ k i h holdiing current i t = 20ma , gate open t c = 25 c 3 ma r th(j-c) thermal impedance junction to case 10 c/w r th(j-a) thermal impedance junction to ambient 75 c/w D2P4M 2/5 ? notes : 1. pulse width = 1.0 ms , duty cycle ? 1% 2. r gk current not included in measurement
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 r (j-c) transient thermal impedance [ o c/w] time (sec) 0.5 1.0 1.5 2.0 2.5 10 -1 10 0 10 1 125 o c 25 o c on-state current [a] on-state voltage [v] 0123456 0 20 40 60 80 100 120 140 = 180 o max. allowable case temperature [ o c] average on-state current [a] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (0.2a) v gd (0.2v) p g(av) (0.1w) p gm (0.5w) v gm (5v) 25 o c gate voltage [v] gate current [ma] ? : conduction angle 360 ? 2 tt -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] 3/5 fig 1. gate characteristics fi g 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. D2P4M
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 = 180 o = 120 o = 90 o = 60 o = 30 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] D2P4M 4/5 fig 8. power dissipation fig 7. typical holding current ? : conduction angl e 360 ? 2 tt
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126 1. t1 2. t2 3. gate a b c d e f g 1 2 3 h i j k l D2P4M 1. cathode 2. anode 3. gate a b c d e f g 1 2 3 h i j k l to-126 package dimension 5/5
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